Title :
Refractive indices of wurtzite and zincblende GaN
Author :
Lin, M.E. ; Sverdlov, B.N. ; Strite, S. ; Morkov, H. ; Drakin, A.E.
Author_Institution :
Mater. Res. Lab., Illnois Univ., Urbana-Champaign, IL, USA
Abstract :
Refractive index measurements on both wurtzite and zincblende GaN films grown by plasma-enhanced molecular beam epitaxy are reported. For birefringent uniaxial wurtzite GaN samples the index of refraction was measured along the crystalline axis. In this direction the index is 2.78 at 3.4 eV. For cubic GaN films grown on GaAs substrates, the refractive index is 2.91 at 3.2 eV. Estimation of the confinement factor for optimised waveguides based a combination of III-V nitrides indicates very favourable values for laser operation.
Keywords :
III-V semiconductors; gallium compounds; molecular beam epitaxial growth; optical waveguides; plasma deposited coatings; refractive index; semiconductor epitaxial layers; semiconductor growth; 3.2 eV; 3.4 eV; GaAs; GaN-GaAs; birefringent uniaxial wurtzite; confinement factor; laser operation; optimised waveguides; plasma-enhanced molecular beam epitaxy; refractive index measurements; zincblende;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19931172
