DocumentCode :
1046005
Title :
Generation and Propagation of Single Event Transients in 0.18- 
Fully Depleted SOI
Author :
Gouker, Pascale ; Brandt, Jim ; Wyatt, Peter ; Tyrrell, Brian ; Soares, Anthony ; Knecht, Jeffrey ; Keast, Craig ; McMorrow, Dale ; Narasimham, Balaji ; Gadlage, Matthew ; Bhuva, Bharat
Author_Institution :
Adv. Silicon Technol. Group, MIT Lincoln Lab., Lexington, MA
Volume :
55
Issue :
6
fYear :
2008
Firstpage :
2854
Lastpage :
2860
Abstract :
Single event transients were characterized experimentally in fast logic circuits fabricated in 0.18-mum FDSOI CMOS process using laser-probing techniques. We show that the transient pulse widens as it propagates; the widening is largely eliminated by the body contact. Good agreement is observed between pulsed-laser and heavy ion testing.
Keywords :
CMOS digital integrated circuits; logic circuits; silicon-on-insulator; CMOS process; body contact; fast logic circuits; full depleted SOI; heavy ion testing; laser-probing techniques; silicon-on-insulator; single event transients; size 0.18 mum; CMOS process; Clocks; Logic circuits; Optical propagation; Pulse circuits; Pulse measurements; Redundancy; Silicon on insulator technology; Space technology; Switching circuits; Floating body; fully depleted silicon-on-insulator; heavy ions; laser irradiation; single-event transients;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2008.2007953
Filename :
4723789
Link To Document :
