The Effects of Hydrogen on the Enhanced Low Dose Rate Sensitivity (ELDRS) of Bipolar Linear Circuits

Author

Pease, Ronald L. ; Adell, Philippe Claude ; Rax, Bernard G. ; Chen, Xiao Jie ; Barnaby, Hugh J. ; Holbert, Keith E. ; Hjalmarson, Harold P.

Author_Institution

RLP Res., Los Lunas, NM

Volume

55

Issue

6

fYear

2008

Firstpage

3169

Lastpage

3173

Abstract

It is experimentally demonstrated with test transistors and circuits that hydrogen is correlated with enhanced low dose rate sensitivity (ELDRS) in bipolar linear circuits. These experiments show that the amount of hydrogen determines the total dose response versus dose rate, both the saturation at low dose rate and the transition dose rate between the high and low dose rate responses. The experimental results are supported with modeling calculations using REOS (radiation effects in oxides and semiconductors).

Keywords

bipolar transistors; hydrogen; integrated circuits; radiation effects; H; bipolar linear circuits; enhanced low dose rate sensitivity; low dose rate responses; pnp transistors; radiation effects in oxides and semiconductors; total dose response; Bipolar transistor circuits; Circuit testing; Degradation; Electronic packaging thermal management; Hydrogen; Ionizing radiation; Linear circuits; Radiation effects; Thermal stresses; Voltage; Dose rate; enhanced low-dose rate sensitivity; hydrogen; interface traps; radiation effects; total ionizing dose; voltage comparator;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2008.2006478

Filename

4723793