DocumentCode :
1046104
Title :
Technique for thermal stabilization of transistors
Author :
Navon, D.H.
Author_Institution :
University of Massachusetts, Amherst, Mass.
Volume :
20
Issue :
10
fYear :
1973
fDate :
10/1/1973 12:00:00 AM
Firstpage :
907
Lastpage :
909
Abstract :
An alternative scheme to transistor thermal stabilization by emitter resistor ballasting is proposed. The technique involves a resistor with a negative temperature coefficient of resistance connected across the emitter-base junction which bypasses excess base current that tends to be drawn due to local transistor heating.
Keywords :
Current-voltage characteristics; Dielectric constant; Electrodes; Electrons; Gallium arsenide; Oscilloscopes; Solids; Space charge; Transconductance; Voltage control;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1973.17768
Filename :
1477425
Link To Document :
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