Title :
Recommended Test Conditions for SEB Evaluation of Planar Power DMOSFETs
Author :
Liu, Sandra ; Titus, Jeffery L. ; DiCienzo, Christopher ; Cao, Huy ; Zafrani, Max ; Boden, Milton ; Berberian, Robert
Author_Institution :
Int. Rectifier Corp., El Segundo, CA
Abstract :
This paper discusses issues concerning single-event burnout (SEB) and single-event gate rupture (SEGR); explains and provides a basic overview of the preferred test conditions and procedures that would yield the most meaningful test results in evaluating power MOSFETs´ SEB susceptibilities, describes how to correctly identify SEB and SEGR failure modes to derive the most feasible failure mechanisms.
Keywords :
power MOSFET; semiconductor device testing; SEB evaluation; planar power DMOSFET; single-event burnout; single-event gate rupture; Cranes; Cyclotrons; Epitaxial layers; Failure analysis; MOSFET circuits; Power MOSFET; Pulp manufacturing; Rectifiers; Testing; Voltage; Heavy ions; power MOSFET; single-event burnout (SEB); single-event gate rupture (SEGR);
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2008.2006841
