• DocumentCode
    1046135
  • Title

    Analysis of Commercial Trench Power MOSFETs\´ Responses to {\\rm Co}^{60} Irradiation

  • Author

    Liu, Sandra ; DiCienzo, Christopher ; Bliss, Martin ; Zafrani, Max ; Boden, Milton ; Titus, Jeffrey L.

  • Author_Institution
    Int. Rectifier Corp., El Segundo, CA
  • Volume
    55
  • Issue
    6
  • fYear
    2008
  • Firstpage
    3231
  • Lastpage
    3236
  • Abstract
    This paper presents a detailed analysis of commercial trench power MOSFET responses to Co60 irradiation of all key d.c. electrical test parameters. Charge trapping in the gate oxide causes the threshold voltage (V TH) to shift, which, in turn, accounts for most of the degradation exhibited by the device after irradiation.
  • Keywords
    power MOSFET; radiation effects; Co60 irradiation; charge trapping; commercial trench power MOSFET; d.c. electrical test parameters; gate oxide; threshold voltage; Cranes; Degradation; Focusing; Image analysis; Ionizing radiation; MOSFETs; Rectifiers; Space technology; Testing; Threshold voltage; Total ionizing dose (TID); trench power MOSFET;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2008.2008991
  • Filename
    4723800
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1046135