Title :
Comparison of InGaAs transistors as optoelectronic mixers
Author :
Urey, Z. ; Wake, D. ; Newson, D.J. ; Henning, I.D.
Author_Institution :
BT Labs., Ipswich, UK
Abstract :
Optoelectronic mixing experiments with a range of different InGaAs transistor structures are reported. Results of measurements with both optically and electrically pumped devices show that heterojunction bipolar transistors offer the best performance in terms of the available signal/noise ratio, where values in excess of 30 dB have been obtained.
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; high electron mobility transistors; indium compounds; junction gate field effect transistors; mixers (circuits); optoelectronic devices; solid-state microwave devices; 30 dB; HBT; HEMT; InGaAs transistors; JFET; SNR; electrically pumped devices; heterojunction bipolar transistors; optically pumped devices; optoelectronic mixers; signal/noise ratio;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19931195
