• DocumentCode
    1046213
  • Title

    LWIP: a long-wavelength infra-red phototransistor

  • Author

    Chand, Naresh

  • Author_Institution
    AT&T Bell Lab., Murray Hill, NJ, USA
  • Volume
    29
  • Issue
    20
  • fYear
    1993
  • Firstpage
    1800
  • Lastpage
    1802
  • Abstract
    A novel device is proposed that combines the principles, functions and advantages of a quantum-well infra-red photodiode and a phototransistor for detection of long wavelength infra-red radiation (6-20 mu m). This device is called an LWIP: a long-wavelength infra-red phototransistor. Si1-xGex/Si is an ideal candidate for this heterostructure. An optimised device is expected to exhibit very low leakage/dark current, high gain and high detectivity, and has the potential of operating at a relatively higher temperature.
  • Keywords
    infrared detectors; phototransistors; LWIP; SiGe-Si; heterostructure; infra-red phototransistor; long-wavelength;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19931198
  • Filename
    274926
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1046213