• DocumentCode
    1046224
  • Title

    Room-temperature resonant tunnelling bipolar transistor XNOR and XOR integrated circuits

  • Author

    Seabaugh, A.C. ; Taddiken, A.H. ; Beam, E.A., III ; Randall, J.N. ; Kao, Y.C. ; Newell, B.

  • Author_Institution
    Central Res. Lab., Texas Instrum. Inc., Dallas, TX, USA
  • Volume
    29
  • Issue
    20
  • fYear
    1993
  • Firstpage
    1802
  • Lastpage
    1803
  • Abstract
    The first resonant tunnelling bipolar transistor integrated circuits operating at room temperature are demonstrated. The circuits are composed of cointegrated resonance tunnelling bipolar transistors and double heterojunction bipolar transistors based on InP substrates. Both a three-transistor XNOR and a seven-transistor XOR logic gate have been demonstrated using a 3 V power supply.
  • Keywords
    bipolar integrated circuits; heterojunction bipolar transistors; integrated logic circuits; logic gates; resonant tunnelling devices; 3 V; InP substrates; RTBT; XNOR logic gate; XOR logic gate; bipolar transistor integrated circuits; double heterojunction bipolar transistors; resonant tunnelling bipolar transistor; room temperature;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19931199
  • Filename
    274927
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1046224