DocumentCode
1046235
Title
W-band monolithic pseudomorphic AlGaAs/InGaAs/GaAs HEMT CBCPW LNA
Author
Ton, T.-N. ; Wang, Huifang ; Chen, S. ; Tan, K.L. ; Dow, G.S. ; Allen, B.R. ; Berenz, J.
Author_Institution
Div. of Electron. Technol., TRW, Redondo Beach, CA, USA
Volume
29
Issue
20
fYear
1993
Firstpage
1804
Lastpage
1805
Abstract
The authors have developed a W-band monolithic two-stage conductor-backed coplanar waveguide (CBCPW) low-noise amplifier using pseudomorphic AlGaAs/InGaAs/GaAs HEMT devices. The amplifier exhibits a noise figure of 4.2-4.8 dB with an associated gain of 12 dB from 92 to 96 GHz. The circuit was tested using a W-band on-wafer noise figure measurement system. The result is encouraging and shows promise for future MMIC implementation using the CBCPW structure.
Keywords
III-V semiconductors; MMIC; aluminium compounds; field effect integrated circuits; gallium arsenide; high electron mobility transistors; indium compounds; microwave amplifiers; 12 dB; 4.2 to 4.8 dB; 92 to 96 GHz; AlGaAs-InGaAs-GaAs; CPW; EHF; LNA; MIMIC; MM-wave IC; MMIC implementation; W-band; conductor-backed; coplanar waveguide; low-noise amplifier; millimetre-wave circuits; pseudomorphic HEMT; two-stage;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19931200
Filename
274928
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