Title :
Post-Irradiation Annealing Mechanisms of Defects Generated in Hydrogenated Bipolar Oxides
Author :
Chen, X. Jie ; Barnaby, Hugh J. ; Vermeire, Bert ; Holbert, Keith E. ; Wright, David ; Pease, Ronald L. ; Schrimpf, Ronald D. ; Fleetwood, Daniel M. ; Pantelides, Sokrates T. ; Shaneyfelt, Marty R. ; Adell, Philippe
Author_Institution :
Arizona State Univ., Tempe, AZ
Abstract :
Bipolar test structures were irradiated and annealed with various combinations of molecular hydrogen gas ambients, bias, and thermal conditions. The results show that the buildup and annealing behavior of defects in bipolar base oxides depend strongly on hydrogen concentration. Differences observed in trapped oxide charge annealing rates suggest that the charged defects created in hydrogen-rich environments may be attributed to different types of positive charge in addition to trapped holes.
Keywords :
bipolar integrated circuits; radiation effects; bipolar base oxides; bipolar test structures; hydrogen concentration; hydrogenated bipolar oxides; integrated circuits; molecular hydrogen gas ambients; post-irradiation annealing mechanisms; Annealing; CMOS technology; Degradation; Hydrogen; Integrated circuit packaging; Integrated circuit reliability; Ionizing radiation; Laboratories; Propulsion; Testing; Bipolar oxide; gated bipolar devices; hydrogen; interface traps; oxide trapped charge; radiation-induced;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2008.2006972
