Post-Irradiation Annealing Mechanisms of Defects Generated in Hydrogenated Bipolar Oxides

Author

Chen, X. Jie ; Barnaby, Hugh J. ; Vermeire, Bert ; Holbert, Keith E. ; Wright, David ; Pease, Ronald L. ; Schrimpf, Ronald D. ; Fleetwood, Daniel M. ; Pantelides, Sokrates T. ; Shaneyfelt, Marty R. ; Adell, Philippe

Author_Institution

Arizona State Univ., Tempe, AZ

Volume

55

Issue

6

fYear

2008

Firstpage

3032

Lastpage

3038

Abstract

Bipolar test structures were irradiated and annealed with various combinations of molecular hydrogen gas ambients, bias, and thermal conditions. The results show that the buildup and annealing behavior of defects in bipolar base oxides depend strongly on hydrogen concentration. Differences observed in trapped oxide charge annealing rates suggest that the charged defects created in hydrogen-rich environments may be attributed to different types of positive charge in addition to trapped holes.

Keywords

bipolar integrated circuits; radiation effects; bipolar base oxides; bipolar test structures; hydrogen concentration; hydrogenated bipolar oxides; integrated circuits; molecular hydrogen gas ambients; post-irradiation annealing mechanisms; Annealing; CMOS technology; Degradation; Hydrogen; Integrated circuit packaging; Integrated circuit reliability; Ionizing radiation; Laboratories; Propulsion; Testing; Bipolar oxide; gated bipolar devices; hydrogen; interface traps; oxide trapped charge; radiation-induced;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2008.2006972

Filename

4723811