Title :
Theory and applications of near ballistic transport in semiconductors
Author :
Hess, Karl ; Iafrate, Gerald J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
fDate :
5/1/1988 12:00:00 AM
Abstract :
A review of electronic transport in semiconductors in the near ballistic regime is presented. Recent experiments and theories are discussed in detail. It is shown that the basic physics of ballistic transport is qualitatively well understood. Quantitatively much work remains to be done, especially with respect to device applications. Some problems related to applications are discussed in context with hot-electron- and high-electron-mobility-transistors
Keywords :
electrical conductivity of crystalline semiconductors and insulators; high field effects; hot carriers; reviews; semiconductors; HEMT; HET; high electric fields; high-electron-mobility-transistors; hot electron transistors; near ballistic transport; review; semiconductors; Ballistic transport; Electrons; FETs; Gallium arsenide; Gases; History; Impact ionization; Laboratories; Logic devices; Physics;
Journal_Title :
Proceedings of the IEEE
