DocumentCode
1046401
Title
Theory and applications of near ballistic transport in semiconductors
Author
Hess, Karl ; Iafrate, Gerald J.
Author_Institution
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
Volume
76
Issue
5
fYear
1988
fDate
5/1/1988 12:00:00 AM
Firstpage
519
Lastpage
532
Abstract
A review of electronic transport in semiconductors in the near ballistic regime is presented. Recent experiments and theories are discussed in detail. It is shown that the basic physics of ballistic transport is qualitatively well understood. Quantitatively much work remains to be done, especially with respect to device applications. Some problems related to applications are discussed in context with hot-electron- and high-electron-mobility-transistors
Keywords
electrical conductivity of crystalline semiconductors and insulators; high field effects; hot carriers; reviews; semiconductors; HEMT; HET; high electric fields; high-electron-mobility-transistors; hot electron transistors; near ballistic transport; review; semiconductors; Ballistic transport; Electrons; FETs; Gallium arsenide; Gases; History; Impact ionization; Laboratories; Logic devices; Physics;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/5.4439
Filename
4439
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