DocumentCode
1046572
Title
Characteristics of a p-n-p-n switch with an aluminum—Silicon Schottky diode clamp
Author
Schade, Peter A. ; Lin, H.C.
Author_Institution
University of Maryland, College Park, Md.
Volume
20
Issue
12
fYear
1973
fDate
12/1/1973 12:00:00 AM
Firstpage
1159
Lastpage
1160
Abstract
An Al-Si Schottky diode has been incorporated in a p-n-p-n switch using a lateral p-n-p transistor and a vertical n-p-n transistor as a clamp. The switching characteristics are improved (speeded up). The dc characteristics display a negative resistance in the on region, and the on voltage at moderate currents is approximately the same as an unclamped p-n-p-n switch.
Keywords
Anodes; Cathodes; Clamps; Fabrication; Resistors; Schottky barriers; Schottky diodes; Switches; Transient response; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1973.17811
Filename
1477468
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