DocumentCode :
1046572
Title :
Characteristics of a p-n-p-n switch with an aluminum—Silicon Schottky diode clamp
Author :
Schade, Peter A. ; Lin, H.C.
Author_Institution :
University of Maryland, College Park, Md.
Volume :
20
Issue :
12
fYear :
1973
fDate :
12/1/1973 12:00:00 AM
Firstpage :
1159
Lastpage :
1160
Abstract :
An Al-Si Schottky diode has been incorporated in a p-n-p-n switch using a lateral p-n-p transistor and a vertical n-p-n transistor as a clamp. The switching characteristics are improved (speeded up). The dc characteristics display a negative resistance in the on region, and the on voltage at moderate currents is approximately the same as an unclamped p-n-p-n switch.
Keywords :
Anodes; Cathodes; Clamps; Fabrication; Resistors; Schottky barriers; Schottky diodes; Switches; Transient response; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1973.17811
Filename :
1477468
Link To Document :
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