• DocumentCode
    1046603
  • Title

    Effects of ionization rates on IMPATT device admittance

  • Author

    Seddik, M.M. ; Haddad, G.I.

  • Author_Institution
    University of Michigan, Ann Arbor, Mich.
  • Volume
    20
  • Issue
    12
  • fYear
    1973
  • fDate
    12/1/1973 12:00:00 AM
  • Firstpage
    1164
  • Lastpage
    1168
  • Abstract
    The significance of using different ionization rates on the operating characteristics of Si IMPATT devices is examined. The dc breakdown and small-signal results of IMPATT devices at room temperature are presented. Numerical results for p+nn+as well as the complementary n+pp+Si diodes in the millimeter-wave frequency range and at different current densities ranging from 2500 to 10 000 A/cm2are given. It is shown that large differences in some important device parameters are obtained, depending on the ionization rates employed.
  • Keywords
    Admittance; Aluminum; Annealing; Boron; Capacitance; Etching; Ion implantation; Ionization; Resistors; Resists;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1973.17814
  • Filename
    1477471
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1046603