GaN-Based Resonant-Cavity LEDs Featuring a Si-Diffusion-Defined Current Blocking Layer

Author

Yeh, Pinghui S. ; Meng-Chun Yu ; Jia-Huan Lin ; Ching-Chin Huang ; Yen-Chao Liao ; Da-Wei Lin ; Jia-Rong Fan ; Hao-Chung Kuo

Author_Institution

Dept. of Electron. & Comput. Eng., Nat. Taiwan Univ. of Sci. & Technol., Taipei, Taiwan

Volume

26

Issue

24

fYear

2014

fDate

Dec.15, 15 2014

Firstpage

2488

Lastpage

2491

Abstract

GaN-based resonant-cavity light-emitting diode (RCLED) featuring a Si-diffusion-defined confinement structure is reported for the first time. The charge-coupled device images exhibited round, bright spots of sizes corresponding to the diffusion-defined aperture sizes under continuous-wave high-current-density operation and at room temperature. The full widths at half maximum of the electroluminescence spectra were 2 and 1.5 nm for 10- and 5-mu-diameter RCLEDs, respectively. A stable peak wavelength of 406.6 nm was maintained at various injection currents. The results suggest Si diffusion is an effective means to reduce aperture size. The design and fabrication of the devices are described.

Keywords

CCD image sensors; III-V semiconductors; cavity resonators; current density; electroluminescence; gallium compounds; light emitting diodes; light sources; optical design techniques; optical fabrication; optical materials; optical resonators; silicon; GaN; GaN-based resonant-cavity LED; GaN-based resonant-cavity light-emitting diode; RCLED; Si; Si-diffusion-defined confinement structure; Si-diffusion-defined current blocking layer; bright spots; charge-coupled device images; continuous-wave high-current-density operation; device design; device fabrication; diffusion-defined aperture sizes; electroluminescence spectra; full width at half maximum; injection currents; room temperature; size 10 mum; size 5 mum; stable peak wavelength; temperature 293 K to 298 K; wavelength 1.5 nm; wavelength 2 nm; wavelength 406.6 mum; Apertures; Cavity resonators; Distributed Bragg reflectors; Gallium nitride; Indium tin oxide; Light emitting diodes; Silicon; GaN-based LED; Resonant-cavity light-emitting diode; current blocking layer; resonant-cavity light-emitting diode; vertical cavity surface emitting laser;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2014.2362297

Filename

6920027