Author :
Sasse, Guido T. ; Kuper, F.G. ; Schmitz, Jurriaan
Abstract :
In the paper "MOSFET Degradation Under RF Stress" by Guido T. Sasse, Fred G. Kuper, and Jurriaan Schmitz, the first author\´s affiliation should read, "G. T. Sasse carried out this work in the Group of Semiconductor Components, MESA+ Institute for Nanotechnology, University of Twente, Enschede, The Netherlands. He is currently with NXP Semiconductors, Nijmegen, The Netherlands."
