• DocumentCode
    1046939
  • Title

    Improved External Quantum Efficiency of GaN p-i-n Photodiodes With a TiO2 Roughened Surface

  • Author

    Lin, J.C. ; Su, Y.K. ; Chang, S.J. ; Lan, W.H. ; Huang, K.C. ; Cheng, Y.C. ; Lin, W.J.

  • Author_Institution
    Nat. Cheng Kung Univ., Tainan
  • Volume
    20
  • Issue
    4
  • fYear
    2008
  • Firstpage
    285
  • Lastpage
    287
  • Abstract
    Gallium nitride p-i-n ultraviolet photodiodes (PDs) with a titanium dioxide (TiO2) nano-particles roughened surface have been fabricated. It was found that the responsivity and external quantum efficiency can be improved 60% on the surface roughened PDs. It was also found that light absorption can be enhanced from various incident angles by the TiO2 roughened surface. Furthermore, the high detectivity of 9.2 times 1013 cmldrHz1 /2ldrW-1 can be achieved from the PD with a rough surface.
  • Keywords
    III-V semiconductors; gallium compounds; nanoparticles; p-i-n photodiodes; surface roughness; titanium compounds; wide band gap semiconductors; GaN; TiO2; external quantum efficiency; gallium nitride p-i-n ultraviolet photodiodes; light absorption; surface roughness; titanium dioxide nanoparticles; Coatings; Gallium nitride; Leakage current; Light emitting diodes; PIN photodiodes; Rough surfaces; Substrates; Surface resistance; Surface roughness; Titanium; Gallium nitride (GaN); p-i-n; photodiodes (PDs); surface roughness; titanium dioxide (TiO$_{2}$);
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/LPT.2007.915620
  • Filename
    4439741
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1046939