DocumentCode
1046952
Title
A General and Reliable Model for Charge Pumping—Part II: Application to the Study of Traps in 
or in High- 
$hbox{Si}{-}hbox{SiO}_{2}$ interface; Charge pumping (CP); MOSFETs; high-$kappa$
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2008.2009024
Filename
4723906
Link To Document