DocumentCode :
1046952
Title :
A General and Reliable Model for Charge Pumping—Part II: Application to the Study of Traps in 
or in High- 
$hbox{Si}{-}hbox{SiO}_{2}$ interface; Charge pumping (CP); MOSFETs; high-$kappa$
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2008.2009024
Filename :
4723906
Link To Document :
