Quantum distributed model of the resonant tunneling transistor

Author

Taniyama, H. ; Tomizawa, M. ; Yoshii, A.

Author_Institution

NTT LSI Labs., Atsugi, Japan

Volume

41

Issue

3

fYear

1994

fDate

3/1/1994 12:00:00 AM

Firstpage

294

Lastpage

298

Abstract

Two-dimensional simulation is crucial in the analysis of the transport characteristics of a resonant tunneling transistor that has a base electrode attached to the well region of a double barrier structure because of the transistor´s two-dimensional heterogeneousness. We propose a novel numerical model of the resonant tunneling transistor that includes two-dimensional potential distribution and two-dimensional spatial current distribution. By using this mode in the present model, it is found that the transistor´s I-V characteristics are strongly dependent on its internal well resistance

Keywords

current distribution; equivalent circuits; hot electron transistors; resonant tunnelling devices; semiconductor device models; simulation; 2D simulation; I-V characteristics; double barrier structure; internal well resistance; numerical model; quantum distributed model; resonant tunneling transistor; transport characteristics; two-dimensional potential distribution; two-dimensional simulation; two-dimensional spatial current distribution; Analytical models; Current distribution; Electrodes; Numerical models; Numerical simulation; Piecewise linear approximation; Poisson equations; Resonance; Resonant tunneling devices; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.275212

Filename

275212