Title :
Comparative behavior and performances of MESFET and HEMT as a function of temperature
Author :
Gobert, Yannick ; Salmer, Georges
Author_Institution :
Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg, Germany
fDate :
3/1/1994 12:00:00 AM
Abstract :
We present an experimental study of MESFET and conventional HEMT behavior as a function of temperature and limited to the range from 293 K to 393 K. We review the main phenomena appearing under high temperature conditions, and their effects on FET performances. The most important degradations concern, except the mobility in HEMT, the noise figure that can increase drastically between 293 K and 393 K. However, we present structures which seem to be less sensitive to temperature variations
Keywords :
Schottky gate field effect transistors; carrier mobility; high electron mobility transistors; semiconductor device noise; 293 to 393 K; FET performance; HEMT; MESFET; high temperature conditions; mobility; noise figure; performance comparison; temperature sensitivity; temperature variations; Aluminum; Doping profiles; FETs; HEMTs; MESFETs; Noise figure; Space technology; Structural engineering; Temperature distribution; Temperature sensors;
Journal_Title :
Electron Devices, IEEE Transactions on
