Hot carrier effects in n-channel polycrystalline silicon thin-film transistors: a correlation between off-current and transconductance variations

Author

Fortunato, Guglielmo ; Pecora, Alessandro ; Tallarida, G. ; Mariucci, Luigi ; Reita, C. ; Migliorato, P.

Author_Institution

IESS-CNR, Roma, Italy

Volume

41

Issue

3

fYear

1994

fDate

3/1/1994 12:00:00 AM

Firstpage

340

Lastpage

346

Abstract

The application of bias-stresses with high source-drain voltage and different gate voltages in polycrystalline thin-film transistors modifies the transconductance as well as the off current. These effects have been explained in terms of hot-holes injection into the gate insulator causing the formation of trap centers in the oxide and interface states near the drain

Keywords

electric admittance; elemental semiconductors; hole traps; hot carriers; interface electron states; silicon; thin film transistors; MOSFETs; Si; bias-stresses; gate insulator; gate voltages; high source-drain voltage; hot carrier effects; hot-hole injection; interface states; n-channel polycrystalline silicon thin-film transistors; off-current variations; oxide states; transconductance variations; trap centers; Crystallization; Degradation; Hot carrier effects; Hot carriers; Semiconductor thin films; Silicon; Stress; Thin film transistors; Transconductance; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.275218

Filename

275218