Device-Orientation Effects on Multiple-Bit Upset in 65 nm SRAMs

Author

Tipton, Alan D. ; Pellish, Jonathan A. ; Hutson, John M. ; Baumann, Robert ; Deng, Xiaowei ; Marshall, Andrew ; Xapsos, Michael A. ; Kim, Hak S. ; Friendlich, Mark R. ; Campola, Michael J. ; Seidleck, Christina M. ; LaBel, Ken A. ; Mendenhall, Marcus H. ;

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN

Volume

55

Issue

6

fYear

2008

Firstpage

2880

Lastpage

2885

Abstract

The effects of device orientation on heavy ion-induced multiple-bit upset (MBU) in 65 nm SRAMs are examined. The MBU response is shown to depend on the orientation of the device during irradiation. The response depends on the direction of the incident ion to the n- and p-wells of the SRAM. The MBU response is simulated using Monte Carlo methods for a space environment. The probability is calculated for event size. Single-bit upsets in the space environment account for 90% of all events with exponentially decreasing probabilities of larger MBU events.

Keywords

Monte Carlo methods; SRAM chips; Monte Carlo method; SRAM; device-orientation effects; heavy ion-induced multiple-bit upset; single-bit upset; size 65 nm; space environment; Circuits; Helium; NASA; Probability; Protons; Random access memory; Semiconductor materials; Single event upset; Space technology; Testing; GEANT4; MBU; MCU; MRED; Multiple-bit upset; SEU; SRAM; heavy ion; soft error;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2008.2006503

Filename

4723919