On the hot-carrier-induced post-stress interface trap generation in n-channel MOS transistors

Author

Bellens, Rudi ; De Schrijver, Erik ; Van den Bosch, Geert ; Groeseneken, Guido ; Heremans, Paul ; Maes, Herman E.

Author_Institution

IMEC, Leuven, Belgium

Volume

41

Issue

3

fYear

1994

fDate

3/1/1994 12:00:00 AM

Firstpage

413

Lastpage

419

Abstract

A continued fast interface trap generation is observed in n-channel MOS transistors after termination of the hot-carrier stress. The magnitude of this post-stress effect is strongly dependent on the conditions of the preceding stress, on the post-stress conditions and on the process parameters. For measurements at 293 K, a simple model is proposed which is based on the release of hydrogen by the thermal detrapping of holes, and which can explain the observed dependencies. The importance of the post-stress D_it-generation is illustrated for the case of dynamic stress conditions where it can lead to an apparently deviating degradation behavior

Keywords

hole traps; hot carriers; insulated gate field effect transistors; interface electron states; semiconductor device models; 293 K; degradation behavior; device models; dynamic stress conditions; hot-carrier-induced post-stress interface trap generation; n-channel MOS transistors; post-stress conditions; process parameters; thermal detrapping; Charge carrier processes; Charge pumps; Current measurement; Electron traps; Hot carriers; Hydrogen; MOSFETs; Stress measurement; Thermal degradation; Thermal stresses;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.275228

Filename

275228