• DocumentCode
    1047202
  • Title

    The effect of package parasitics on a series connected GaAs IMPATT diode

  • Author

    Chen, W.T. ; Kim, C.K.

  • Author_Institution
    GTE Laboratories, Waltham, Mass.
  • Volume
    21
  • Issue
    1
  • fYear
    1974
  • fDate
    1/1/1974 12:00:00 AM
  • Firstpage
    120
  • Lastpage
    122
  • Abstract
    Computer analysis of a series connected GaAs IMPATT diode is presented. Very good agreement between theoretical appraisal and the experimental observations is obtained. A better thermal dissipation and a smaller parasitic capacitance are the solution to the key problem areas for the series connected device.
  • Keywords
    Appraisal; Capacitance; Electromagnetic heating; Electronic packaging thermal management; Equivalent circuits; Gallium arsenide; Impedance; Microwave devices; Radio frequency; Schottky diodes;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1974.17872
  • Filename
    1477687
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1047202