DocumentCode
1047216
Title
On the accuracy of the theoretical high-frequency semiconductor capacitance for inverted MOS structures
Author
Baccarani, G. ; Severi, M.
Author_Institution
Universita di Bologna, Bologna, Italy
Volume
21
Issue
1
fYear
1974
fDate
1/1/1974 12:00:00 AM
Firstpage
122
Lastpage
125
Abstract
The accuracy of the usual expression of the high-frequency semiconductor capacitance is investigated by means of a charge-analysis model which takes into account the minority carrier rearrangement within the inversion layer due to the ac signal. In the range of doping concentrations of practical interest, it is found that the errors never exceed 5 percent, even in the strong inversion region.
Keywords
Capacitance; Circuits; Current density; Electromagnetic heating; Impedance; Radio frequency; Schottky diodes; Semiconductor device doping; Semiconductor device packaging; Semiconductor diodes;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1974.17873
Filename
1477688
Link To Document