Title :
On the accuracy of the theoretical high-frequency semiconductor capacitance for inverted MOS structures
Author :
Baccarani, G. ; Severi, M.
Author_Institution :
Universita di Bologna, Bologna, Italy
fDate :
1/1/1974 12:00:00 AM
Abstract :
The accuracy of the usual expression of the high-frequency semiconductor capacitance is investigated by means of a charge-analysis model which takes into account the minority carrier rearrangement within the inversion layer due to the ac signal. In the range of doping concentrations of practical interest, it is found that the errors never exceed 5 percent, even in the strong inversion region.
Keywords :
Capacitance; Circuits; Current density; Electromagnetic heating; Impedance; Radio frequency; Schottky diodes; Semiconductor device doping; Semiconductor device packaging; Semiconductor diodes;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1974.17873
