Title :
Comments on "Peripheral and diffused layer effects on doping profiles"
Author :
Basavaraj, T.N. ; Bhattacharyya, A.B.
Author_Institution :
Indian Institute of Technology, New Delhi, India
Abstract :
A simple method is described for the characterization of uniformly doped epitaxial layers from the capacitance-voltage measurements of a diffused p-n junction, considering the peripheral effect due to the sidewall junction and the diffused layer effect due to the depletion region in the heavily doped side of the junction.
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1974.17874
