• DocumentCode
    1047226
  • Title

    Comments on "Peripheral and diffused layer effects on doping profiles"

  • Author

    Basavaraj, T.N. ; Bhattacharyya, A.B.

  • Author_Institution
    Indian Institute of Technology, New Delhi, India
  • Volume
    21
  • Issue
    1
  • fYear
    1974
  • Firstpage
    125
  • Lastpage
    126
  • Abstract
    A simple method is described for the characterization of uniformly doped epitaxial layers from the capacitance-voltage measurements of a diffused p-n junction, considering the peripheral effect due to the sidewall junction and the diffused layer effect due to the depletion region in the heavily doped side of the junction.
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1974.17874
  • Filename
    1477689
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1047226