Title :
Millimeter-wave GaAs Schottky-barrier IMPATT diodes
Author :
Nawata, Kiyoshi ; Ikeda, Mutsuo ; Ishii, Yasuhiro
Author_Institution :
Musashino Electrical Communication Laboratory, NTT, Tokyo, Japan
fDate :
1/1/1974 12:00:00 AM
Abstract :
Recent experimental observations on a Schottky-barrier GaAs IMPATT diode for F-band operation are presented. The diode slices were thinned to 10 to 20 µm by removing the substrate by precision polishing. Output power of 304 mW at 50 GHz with 4.58 percent efficiency was observed. The highest efficiency was 4.72 percent at 55 GHz.
Keywords :
Electrons; Epitaxial layers; Frequency; Gallium arsenide; Gold; Power dissipation; Schottky barriers; Schottky diodes; Substrates; Thermal conductivity;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1974.17876
