Title :
Silicon—Aluminum gate complementary IGFET´s
Author :
Wang, Ruiqi ; DeMassa, T.A.
fDate :
1/1/1974 12:00:00 AM
Abstract :
Silicon-aluminum gate complementary IGFET´S have been fabricated with threshold voltages in the range of 0.5-0.7 V. This was accomplished by a two-source evaporation process in which aluminum and at least 10 percent silicon were used for the gate electrode.
Keywords :
Aluminum; Capacitance-voltage characteristics; Electrodes; Equations; Etching; Fabrication; Metallization; Silicon; Substrates; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1974.17877
