Title :
The anomalous threshold voltage shift of N- and P-MOSFET under flow and reflow of BPSG film with RTA and/or furnace
Author :
Hsieh, J.C. ; Fang, Y.K. ; Chen, C.W. ; Tsai, N.S. ; Lin, M.S. ; Tseng, F.C.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
3/1/1994 12:00:00 AM
Abstract :
Different post oxide annealing technologies, i.e. furnace and/or RTA were done in borophosphosilicate glass (BPSG) films under flow and reflow. It is found that the threshold voltage shift is apparent in P-MOSFET but small in N-MOSFET for a device with RTA reflow. Base on the charge pumping measurement, the donor-type interface states generated by RTA reflow process are supposed to play a major role in this shift. The authors explain the mechanism of RTA induced donor-like interface states in detail
Keywords :
annealing; borosilicate glasses; insulated gate field effect transistors; interface electron states; phosphosilicate glasses; rapid thermal processing; semiconductor technology; B2O3-P2O5-SiO2; BPSG; BPSG film; N-MOSFET; P-MOSFET; RTA; anomalous threshold voltage shift; charge pumping measurement; donor-type interface states; furnace annealing; CMOS technology; Charge measurement; Charge pumps; Current measurement; Furnaces; Interface states; MOSFET circuits; Rapid thermal annealing; Temperature; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
