Title :
The effects of metal-n+ interface and space charge limited conduction on the performance of amorphous silicon thin-film transistors
Author :
GadelRab, Serag M. ; Chamberlain, Savvas G.
Author_Institution :
Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
fDate :
3/1/1994 12:00:00 AM
Abstract :
We derive a contact current density expression that accounts for both the metal-n+ film interface resistance and the space charge limited conduction in amorphous silicon thin-film transistors. Our model demonstrates that the metal-n+ interface behavior dominates over space charge limited conduction for the a-Si:H film thicknesses used in pixel switching
Keywords :
amorphous semiconductors; current density; elemental semiconductors; hydrogen; insulated gate field effect transistors; semiconductor device models; semiconductor-metal boundaries; silicon; space-charge-limited conduction; thin film transistors; Si:H; TFT model; amorphous Si; contact current density expression; interface resistance; metal-n+ interface; pixel switching; space charge limited conduction; thin-film transistors; Amorphous silicon; Conductive films; Conductivity; Contact resistance; Current density; Metallization; Semiconductor films; Space charge; Thin film transistors; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
