The effects of metal-n⁺ interface and space charge limited conduction on the performance of amorphous silicon thin-film transistors

Author

GadelRab, Serag M. ; Chamberlain, Savvas G.

Author_Institution

Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada

Volume

41

Issue

3

fYear

1994

fDate

3/1/1994 12:00:00 AM

Firstpage

462

Lastpage

464

Abstract

We derive a contact current density expression that accounts for both the metal-n⁺ film interface resistance and the space charge limited conduction in amorphous silicon thin-film transistors. Our model demonstrates that the metal-n⁺ interface behavior dominates over space charge limited conduction for the a-Si:H film thicknesses used in pixel switching

Keywords

amorphous semiconductors; current density; elemental semiconductors; hydrogen; insulated gate field effect transistors; semiconductor device models; semiconductor-metal boundaries; silicon; space-charge-limited conduction; thin film transistors; Si:H; TFT model; amorphous Si; contact current density expression; interface resistance; metal-n⁺ interface; pixel switching; space charge limited conduction; thin-film transistors; Amorphous silicon; Conductive films; Conductivity; Contact resistance; Current density; Metallization; Semiconductor films; Space charge; Thin film transistors; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.275240

Filename

275240

The effects of metal-n+ interface and space charge limited conduction on the performance of amorphous silicon thin-film transistors

GadelRab, Serag M. ; Chamberlain, Savvas G.

jour

The effects of metal-n⁺ interface and space charge limited conduction on the performance of amorphous silicon thin-film transistors