Title :
A comparison between N+-P-P+and P+-N-N+silicon IMPATT diodes
Author :
Lee, Charles M. ; Haddad, George I. ; Lomax, Ronald J.
Author_Institution :
Bell Laboratories, Murray Hill, N. J.
fDate :
2/1/1974 12:00:00 AM
Abstract :
A one-dimensional large-signal computer program that incorporates the material parameters of Si in an exact manner has been employed to compare the efficiency, power output, and other important operating characteristics of both complementary structures of Si IMPATT diodes. The results presented here differ greatly from those already reported by other authors.
Keywords :
Charge carrier processes; Dielectric constant; Diodes; Electron mobility; Ionization; Numerical models; Physics; Radio frequency; Silicon; Stability;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1974.17882
