• DocumentCode
    1047300
  • Title

    A comparison between N+-P-P+and P+-N-N+silicon IMPATT diodes

  • Author

    Lee, Charles M. ; Haddad, George I. ; Lomax, Ronald J.

  • Author_Institution
    Bell Laboratories, Murray Hill, N. J.
  • Volume
    21
  • Issue
    2
  • fYear
    1974
  • fDate
    2/1/1974 12:00:00 AM
  • Firstpage
    137
  • Lastpage
    141
  • Abstract
    A one-dimensional large-signal computer program that incorporates the material parameters of Si in an exact manner has been employed to compare the efficiency, power output, and other important operating characteristics of both complementary structures of Si IMPATT diodes. The results presented here differ greatly from those already reported by other authors.
  • Keywords
    Charge carrier processes; Dielectric constant; Diodes; Electron mobility; Ionization; Numerical models; Physics; Radio frequency; Silicon; Stability;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1974.17882
  • Filename
    1477697
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1047300