Title :
Thermally oxidized mesa Schottky barrier diodes
Author :
Gutknecht, P. ; Strutt, M. J Oaif
Author_Institution :
Hughes Research Laboratories, Newport Beach, Calif.
fDate :
2/1/1974 12:00:00 AM
Abstract :
Schottky barriers with a thermally oxidized mesa structure have been fabricated. The fabrication process is described. The mesa structure averts electric field crowding at the barrier periphery. The reverse diode characteristic shows a sharp breakdown at the voltage expected for an ideal, abrupt diode of semi-infinite extent and identical doping concentration.
Keywords :
Birefringence; Electrodes; Glass; Liquid crystals; Nonhomogeneous media; Optical films; Schottky barriers; Schottky diodes; Valves; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1974.17888
