• DocumentCode
    1047353
  • Title

    Thermally oxidized mesa Schottky barrier diodes

  • Author

    Gutknecht, P. ; Strutt, M. J Oaif

  • Author_Institution
    Hughes Research Laboratories, Newport Beach, Calif.
  • Volume
    21
  • Issue
    2
  • fYear
    1974
  • fDate
    2/1/1974 12:00:00 AM
  • Firstpage
    172
  • Lastpage
    173
  • Abstract
    Schottky barriers with a thermally oxidized mesa structure have been fabricated. The fabrication process is described. The mesa structure averts electric field crowding at the barrier periphery. The reverse diode characteristic shows a sharp breakdown at the voltage expected for an ideal, abrupt diode of semi-infinite extent and identical doping concentration.
  • Keywords
    Birefringence; Electrodes; Glass; Liquid crystals; Nonhomogeneous media; Optical films; Schottky barriers; Schottky diodes; Valves; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1974.17888
  • Filename
    1477703
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1047353