Title :
Avalanche multiplication factors in Ge and Si abrupt junctions
Author_Institution :
University of Naples, Naples, Italy
fDate :
3/1/1974 12:00:00 AM
Abstract :
Analytical approximations for the multiplication factors Mnand Mpin Ge and Si one-sided abrupt junctions are given. The resulting expressions account for different α and β ionization rates and are quite accurate. With further approximations on the ionization integrals, very simple expressions of 1 -- 1/M both for electron and holes in the range of very low multiplication are obtained, depending from a single ionization rate.
Keywords :
Charge carrier processes; Dictionaries; Electron devices; Electrothermal effects; Impedance; Ionization; Operational amplifiers; Power amplifiers; Solid state circuits; Surface waves;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1974.17900
