Experiments and model of nonequilibrium behavior of MIS varactors using the linear ramp technique

Whereas the majority of methods evaluating properties of the interface between silicon and silicon dioxide requires (quasi-) equilibrium conditions of the sample, pulse and linear ramp techniques consider nonequilibrium behavior. A theoretical model of nonequilibrium behavior within the semiconductor deep depletion layer, and its consequences for the formation of an inversion region is presented providing current-voltage plots for comparison with the experimental results and discussion of various parameters (temperature and ramp velocity). The influence of donor- or acceptor-type interface states is also considered under the aspect of different temperatures. Thus some decision concerning the type is provided leading to the outlines of exact treatment, if states of either type are present.