Measurements and interpretation of low-frequency noise in FET´s

Equivalent gate-noise voltage magnitudes of MOSFET´s and JFET´s have been measured by a direct method for the frequency range of 20 Hz-9 kHz. Results of a number of theoretical analyses of MOSFET flicker noise have been combined to yield a generalized expression for the drain-noise current. Experimental results showing the bias, temperature, and frequency dependence of the noise have been presented and carefully examined in cognizance with the divergent nature of various theories and relevant published experimental data.