The effects of surface metallization on the thermal behavior of GaAs microwave power devices

Author

Gui, Xiang ; Gao, Guang-bo ; Morkoç, Hadis

Author_Institution

Coordinated Sci. Lab., Illinois Univ., Urbana, IL, USA

Volume

42

Issue

2

fYear

1994

fDate

2/1/1994 12:00:00 AM

Firstpage

342

Lastpage

344

Abstract

The effects of surface metallization on the thermal behavior of GaAs microwave power devices have been studied numerically using the three-dimensional transmission-line matrix (3D TLM) method. Thermal results for a representative GaAs power device with no metallization, with an entire metal overlayer, and with realistic geometrical surface features are compared under both steady-state and transient conditions. The peak temperature within the device is found to be reduced by over 20 percent by the presence of surface metallization. The mechanism responsible for this improvement is identified and discussed

Keywords

III-V semiconductors; MMIC; gallium arsenide; heterojunction bipolar transistors; metallisation; power integrated circuits; power transistors; semiconductor device models; solid-state microwave devices; thermal analysis; transient response; transmission line theory; 3D TLM method; GaAs; metal overlayer; microwave power devices; peak temperature; steady-state conditions; surface metallization; thermal behavior; three-dimensional transmission-line matrix; transient conditions; Electromagnetic heating; FETs; Gallium arsenide; Laboratories; Metallization; Microwave devices; Microwave theory and techniques; Steady-state; Temperature; Thermal conductivity;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.275268

Filename

275268