• DocumentCode
    1047625
  • Title

    Output capability of electron beam-semiconductor bandpass amplifiers using large-area diodes

  • Author

    Weiner, Maurice ; Braun, Martin

  • Author_Institution
    Electronics Technology Laboratory, Ft. Monmouth, N. J.
  • Volume
    21
  • Issue
    5
  • fYear
    1974
  • fDate
    5/1/1974 12:00:00 AM
  • Firstpage
    308
  • Lastpage
    310
  • Abstract
    Design equations for electron beam-semiconductor (EBS) bandpass amplifiers using large-area diodes are discussed. The large-area diodes are used to enhance power output and efficiency, particularly in the case of average-power amplifiers. Both class A and class B modes are treated.
  • Keywords
    Bandwidth; Capacitance; Diodes; Electron beams; Equations; High power amplifiers; Operational amplifiers; Power amplifiers; Radio frequency; Radiofrequency amplifiers;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1974.17916
  • Filename
    1477731
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1047625