Ultrathin Si Thin-Film Transistor on Glass

Author

Cheon, Jun Hyuk ; Park, Seung Hyun ; Kang, Moon Hyo ; Jang, Jin ; Ahn, Sung Eun ; Cites, Jeffrey ; Williams, Carlo Kosik ; Wang, Chuan Che

Author_Institution

Dept. of Inf. Display & Adv. Display Res. Center, Kyung Hee Univ., Seoul

Volume

30

Issue

2

fYear

2009

Firstpage

145

Lastpage

147

Abstract

We have studied the fabrication of ultrathin single-crystalline-silicon thin-film transistors (TFTs) on glass. The single-crystalline Si layer was transferred to glass by hydrogen implantation and anodic bonding. The thickness of the silicon-on-glass (SiOG) was controlled down to 10 nm by dry etching. The p-channel SiOG TFTs with 10-nm-thick Si exhibited the field-effect mobility of 134.9 cm²/Vmiddots, threshold voltage of -1.5 V, and gate voltage swing of 0.13 V/dec. The TFTs were found to be stable against gate bias stress of +30 or -30 V.

Keywords

bonding processes; carrier mobility; elemental semiconductors; etching; field effect transistors; ion implantation; nanoelectronics; nanofabrication; silicon; silicon-on-insulator; thin film transistors; Si; anodic bonding process; dry etching; field-effect mobility; gate bias stress; gate voltage swing; hydrogen implantation; p-channel SiOG TFT; silicon-on-glass; size 10 nm; thin-film transistor fabrication; ultrathin single-crystalline-silicon TFT; voltage -1.5 V; voltage -30 V to 30 V; Silicon-on-insulator technology; thin films; thin-film transistors (TFTs);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2008.2010065

Filename

4729617