DocumentCode
1047668
Title
The Electrical and Interfacial Properties of Metal-High- 
Oxide-Semiconductor Field-Effect Transistors With  from 11 K to 400 K is -1.51 mV/K, and the electron mobility limited by surface roughness is proportional to E<sub>eff</sub> <sup>-0.66</sup>.</div></div>
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<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Keywords</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>MOSFET; carrier lifetime; characteristics measurement; electron mobility; high-k dielectric thin films; lanthanum compounds; leakage currents; minority carriers; permittivity; semiconductor device measurement; surface recombination; surface roughness; surface states; LaAlO<sub>3</sub>; capacitance-voltage measurement; dielectric constant; effective capture cross section; electrical property; electron mobility degradation mechanism; gate dielectrics; gated-diode measurement; interfacial property; leakage current density; metal-high-kappa oxide-semiconductor field-effect transistor; minority-carrier lifetime; n-channel MOSFET; surface roughness; surface states; surface-recombination velocity; temperature 11 K to 400 K; voltage -1 V; <formula formulatype=)
$hbox{LaAlO}_{3}$ ; Gated diode; mobility degradation mechanisms;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2009.2009554
Filename
4729619
Link To Document