DocumentCode
1047698
Title
GaAs Schottky—Read diodes for x-band operation
Author
Wisseman, W.R. ; Shaw, D.W. ; Adams, Robert L. ; Hasty, Turner E.
Author_Institution
Texas Instruments Inc., Dallas, Tex.
Volume
21
Issue
6
fYear
1974
fDate
6/1/1974 12:00:00 AM
Firstpage
317
Lastpage
323
Abstract
High-efficiency performance of GaAs Schottky-Read IMPATT diodes has been observed at X-band frequencies. The highest efficiency measured was 26.1 percent with 2.5-W continuous-wave (CW) output power at 8.8 GHz for a single-mesa diode while multiple-mesa diodes have delivered more than 7 W at X band. The diodes were fabricated from multiple-layer epitaxial material with gold-plated heat sinks. Details of materials preparation and diode fabrication are presented. Theoretical calculations of diode breakdown voltage and efficiencies have been made as a function of the structural properties of the diodes. Good agreement has been obtained between the experimental microwave oscillator performance and the theoretical calculations.
Keywords
Electromagnetic heating; Fabrication; Frequency; Gallium arsenide; Heat sinks; Materials preparation; Microwave oscillators; Power generation; Power measurement; Schottky diodes;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1974.17923
Filename
1477738
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