Title :
New Hot-Carrier Injection Mechanism at Source Side in Nanoscale Floating-Body MOSFETs
Author :
Yang, J.-W. ; Harris, H.R. ; Bersuker, G. ; Kang, C.Y. ; Oh, J. ; Lee, B.H. ; Tseng, H.-H. ; Jammy, R.
Author_Institution :
Dept. of Electron. & Inf. Eng., Korea Univ., Jochiwon
Abstract :
A new hot-carrier injection mechanism that depends on gate bias and body thickness in nanoscale floating-body MOSFETs has been identified using 2-D device simulation and hot-carrier degradation measurements. When gate voltage is sufficiently high and the body thickness is thin, the potential of the floating body is elevated due to the ohmic voltage drop at the source extension (SE), resulting in impact ionization at the SE. Hot-carrier stress with accelerated gate voltage may lead to a huge overestimation of lifetime in nanoscale floating-body MOSFETs.
Keywords :
MOSFET; 2D device simulation; accelerated gate voltage; hot-carrier degradation measurements; hot-carrier injection mechanism; hot-carrier stress; nanoscale floating-body MOSFET; Acceleration; Degradation; Hot carrier injection; Hot carriers; Impact ionization; MOSFETs; Nanoscale devices; Stress; Thickness measurement; Voltage; FinFET; floating-body MOSFETs; hot-carrier injection (HCI); lifetime;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2008.2007661
