The InSb on a piezoelectric Rayleigh wave amplifier

Results taken from monolithic acoustic surface-wave amplifiers which employ the interaction between carriers drifting in a semiconductor film and electric fields accompanying a Rayleigh wave propagating on a piezoelectric substrate are described. The experimental devices were fabricated in vacuum by flash evaporation of a InSb compound onto heated substrates of LiNbO3or Bi12GeO20. Theoretical and experimental amplifier results are presented for several different pulsed operating monolithic devices. The results include measurements of electronic and terminal gain, saturation power, and noise figure as a function of bias voltage, and gain and phase dispersion as a function of frequency. Results are also given for a two film device which uses field effect to alter the conductivity of the amplifier film. Results from continuously operating samples fabricated by etching the semiconductor to a strip 25 µm in width are summarized.