One-dimensional study of buried-channel charge-coupled devices

An analysis leading to some basic relations is performed on a one-dimensional model of a buried-channel charge-coupled device (CCD). Expressions for the charge distribution, potential, channel thickness, and location are obtained. These enable the effects of varying the device structural parameters, as well as the gate voltage and signal charge, to be examined very simply. The maximum charge-carrying capacity is discussed and compared to that for a surface-type CCD. Furthermore, the analysis is extended to a device with a nonuniformly doped semiconductor layer.