• DocumentCode
    1047970
  • Title

    Design for silicon infrared sensing MOSFET

  • Author

    Forbes, Leonard ; Yeargan, Jerry R.

  • Author_Institution
    University of Arkansas, Fayetteville, Ark.
  • Volume
    21
  • Issue
    8
  • fYear
    1974
  • fDate
    8/1/1974 12:00:00 AM
  • Firstpage
    459
  • Lastpage
    462
  • Abstract
    A design is described for an infrared sensing MOSFET (IRFET). The high-gain high-resolution dc or static readout and inherent integrating and memory characteristics of the infrared sensing MOSFET should make it ideal for infrared imaging and target tracking applications employing a large-scale integrated array. The devices are based on silicon MOSFET technology where large-scale integrated arrays are routinely fabricated.
  • Keywords
    Energy states; Impurities; Infrared imaging; Ionization; Large scale integration; MOSFET circuits; Read only memory; Silicon; Space charge; Temperature;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1974.17950
  • Filename
    1477765
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1047970