Title :
Using Selective Voltage Binning to Maximize Yield
Author :
Lichtensteiger, Susan ; Bickford, Jeanne Paulette
Author_Institution :
IBM Corp. Syst. & Technol. Group, Essex Junction, VT, USA
Abstract :
Yield loss associated with leakage screens is increasing as products migrate to technologies with thinner gate oxide and more aggressive lithography. Product competitiveness requires meeting low power and when products have exhausted design options, tighter than 3 sigma fast leakage screens are implemented to reduce power which can result in significant yield loss.
Keywords :
design engineering; leakage currents; lithography; power integrated circuits; semiconductor technology; design; leakage screens; lithography; product competitiveness; product power reduction; selective voltage binning; yield loss; Capacitance; Leakage currents; Lithography; Performance evaluation; Product design; Yield estimation; IDDQ; Screen; voltage binning; yield;
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
DOI :
10.1109/TSM.2013.2268392