DocumentCode :
104798
Title :
Using Selective Voltage Binning to Maximize Yield
Author :
Lichtensteiger, Susan ; Bickford, Jeanne Paulette
Author_Institution :
IBM Corp. Syst. & Technol. Group, Essex Junction, VT, USA
Volume :
26
Issue :
4
fYear :
2013
fDate :
Nov. 2013
Firstpage :
436
Lastpage :
441
Abstract :
Yield loss associated with leakage screens is increasing as products migrate to technologies with thinner gate oxide and more aggressive lithography. Product competitiveness requires meeting low power and when products have exhausted design options, tighter than 3 sigma fast leakage screens are implemented to reduce power which can result in significant yield loss.
Keywords :
design engineering; leakage currents; lithography; power integrated circuits; semiconductor technology; design; leakage screens; lithography; product competitiveness; product power reduction; selective voltage binning; yield loss; Capacitance; Leakage currents; Lithography; Performance evaluation; Product design; Yield estimation; IDDQ; Screen; voltage binning; yield;
fLanguage :
English
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
Publisher :
ieee
ISSN :
0894-6507
Type :
jour
DOI :
10.1109/TSM.2013.2268392
Filename :
6531674
Link To Document :
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