• DocumentCode
    1048080
  • Title

    Tunable ({\\rm La},{\\rm Sr}){\\rm MnO}_{3} (LSMO) Ferromagnetic Thin Films for Radio Frequency Applications

  • Author

    Al Ahmad, Mahmoud ; Lee, Young Taek ; Cheon, Chae Il ; Yun, Eui-Jung ; Plana, Robert

  • Author_Institution
    LAAS, CNRS, Toulouse
  • Volume
    19
  • Issue
    1
  • fYear
    2009
  • Firstpage
    36
  • Lastpage
    38
  • Abstract
    In this letter, an original work in tunable (La,Sr)MnO3 (LSMO) ferromagnetic thin film materials for radio frequency applications is presented. 400 nm thick LSMO thin film is formed by the chemical solution deposition on the top of indium tin oxide (ITO)/SiO2/Si heterostructure. Interdigitated capacitor structures are used to study the behavior of LSMO thin film materials when a dc electrostatic field bias is applied. With increasing the dc voltage bias, the differential resistance of the film decreases. This change is pronounced in the measured scattering parameters of the device. The presented structure exhibits a tunable wide resistance.
  • Keywords
    ferromagnetic materials; indium compounds; lanthanum compounds; magnetic thin films; magnetoresistive devices; silicon; silicon compounds; strontium compounds; thin film capacitors; (LaSr)MnO3; InSnO-SiO2-Si; chemical solution deposition; dc electrostatic field bias; dc voltage bias; differential resistance; indium tin oxide heterostructure; interdigitated capacitor structures; radio frequency applications; tunable ferromagnetic thin films; $({rm La},{rm Sr}){rm MnO}_{3}$ (LSMO); Ferromagnetic; material parameters; tunability; tunable circuit; tunable inductor;
  • fLanguage
    English
  • Journal_Title
    Microwave and Wireless Components Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1531-1309
  • Type

    jour

  • DOI
    10.1109/LMWC.2008.2008575
  • Filename
    4729657
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1048080