Title :
Voltage-controlled DNR in unijunction transistor structure
fDate :
9/1/1974 12:00:00 AM
Abstract :
Modified structure of a conventional diffused planar unijunction transistor (UJT) having a feasible voltage-controlled differential negative resistance (DNR) characteristic is developed using high-resistivity n-type silicon. The origin of a voltage-controlled DNR is qualitatively explained. A quantitative analysis is given and a comparison with experimental results is made.
Keywords :
Charge carrier density; Charge carrier processes; Circuits; Digital video broadcasting; Electron emission; Electron mobility; Fusion power generation; Josephson junctions; Superconductivity; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1974.17973
