• DocumentCode
    1048207
  • Title

    MOSFET thresholds at 4.2 K induced by cooling bias

  • Author

    Tokuda, A.R. ; Lauritzen, P.O.

  • Volume
    21
  • Issue
    9
  • fYear
    1974
  • fDate
    9/1/1974 12:00:00 AM
  • Firstpage
    606
  • Lastpage
    607
  • Abstract
    The threshold voltage of a MOSFET at 4.2 K is affected by the particular bias condition present while the device is being cooled. Measurements disagree with a simple model based upon stored bulk-charge.
  • Keywords
    Cooling; Cryogenics; Frequency; Geometry; MOSFET circuits; SQUIDs; Superconductivity; Temperature; Thermal conductivity; Tunneling;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1974.17975
  • Filename
    1477790
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1048207