• DocumentCode
    1048254
  • Title

    High performance GaAs quasi-planar varactors for millimeter waves

  • Author

    Calviello, Joseph A. ; Wallace, John L. ; Bie, Paul R.

  • Author_Institution
    AIL Division of Cutler-Hammer, Long Island, N. Y.
  • Volume
    21
  • Issue
    10
  • fYear
    1974
  • fDate
    10/1/1974 12:00:00 AM
  • Firstpage
    624
  • Lastpage
    630
  • Abstract
    A novel quasi-planar and highly reliable varactor configuration has been developed to batch fabricate fully passivated GaAs Schottky varactors with near ideal characteristics and state of the art performance. Typically, they exhibit at zero bias a junction capacitance of 0.12 pF and a cutoff frequency in excess of 700 GHz when measured at 70 GHz. As frequency doublers (∼ 35 to 70 GHz) and triplers (35 to 105 GHz), efficiencies greater than 40 and 25 percent, respectively, have been achieved. In a parametric amplifier pumped at 105 GHz and operated in the 55- to 65-GHz signal frequency band, a gain of 14 dB, a 1-dB bandwidth of 670 MHz, and a single sideband noise factor of 5.9 dB were achieved.
  • Keywords
    Frequency; Gallium arsenide; Gold; Millimeter wave measurements; Millimeter wave technology; Palladium; Schottky barriers; Semiconductor device noise; Substrates; Varactors;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1974.17980
  • Filename
    1477795