DocumentCode
1048254
Title
High performance GaAs quasi-planar varactors for millimeter waves
Author
Calviello, Joseph A. ; Wallace, John L. ; Bie, Paul R.
Author_Institution
AIL Division of Cutler-Hammer, Long Island, N. Y.
Volume
21
Issue
10
fYear
1974
fDate
10/1/1974 12:00:00 AM
Firstpage
624
Lastpage
630
Abstract
A novel quasi-planar and highly reliable varactor configuration has been developed to batch fabricate fully passivated GaAs Schottky varactors with near ideal characteristics and state of the art performance. Typically, they exhibit at zero bias a junction capacitance of 0.12 pF and a cutoff frequency in excess of 700 GHz when measured at 70 GHz. As frequency doublers (∼ 35 to 70 GHz) and triplers (35 to 105 GHz), efficiencies greater than 40 and 25 percent, respectively, have been achieved. In a parametric amplifier pumped at 105 GHz and operated in the 55- to 65-GHz signal frequency band, a gain of 14 dB, a 1-dB bandwidth of 670 MHz, and a single sideband noise factor of 5.9 dB were achieved.
Keywords
Frequency; Gallium arsenide; Gold; Millimeter wave measurements; Millimeter wave technology; Palladium; Schottky barriers; Semiconductor device noise; Substrates; Varactors;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1974.17980
Filename
1477795
Link To Document