• DocumentCode
    1048415
  • Title

    Frequency response of Ga1-xAlxAs light-emitting diodes

  • Author

    Namizaki, Hirofumi ; Nagano, Mlnehiko ; Nakahara, Shojiro

  • Author_Institution
    Mitsubishi Electric Corporation, Itami, Japan
  • Volume
    21
  • Issue
    11
  • fYear
    1974
  • fDate
    11/1/1974 12:00:00 AM
  • Firstpage
    688
  • Lastpage
    691
  • Abstract
    Frequency responses of Ga1-xAlxAs light-emitting diodes with various Al composition are measured. When the emission peaks become shorter than 7000 Å, the cutoff frequencies decrease abruptly from 15 MHz to 5 MHz. A conclusion is that the frequency response is determined mainly by the lifetime of injected electrons which changes along with the Al composition because of the distribution of electrons between the Γ and X valleys.
  • Keywords
    Capacitance; Charge carrier lifetime; Current measurement; Cutoff frequency; Electrons; Epitaxial growth; Frequency estimation; Frequency response; Light emitting diodes; P-n junctions;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1974.17995
  • Filename
    1477810
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1048415